NAND datasheets usually give the maximum number of bad blocks per LUN
and this number can be used to help upper layers decide how much blocks
they should reserve for bad block handling.
Add a max_bad_eraseblocks_per_lun to the nand_memory_organization
struct and update the NAND_MEMORG() macro (and its users) accordingly.
We also provide a default mtd->_max_bad_blocks() implementation.
Signed-off-by: Boris Brezillon <bbrezillon@kernel.org>
Signed-off-by: Miquel Raynal <miquel.raynal@bootlin.com>
Reviewed-by: Frieder Schrempf <frieder.schrempf@kontron.de>
Commit e7bfb3fdbd ("mtd: Stop updating erase_info->state and calling
mtd_erase_callback()") removed the einfo->state field and the
MTD_ERASE_XXX macros. At the same time, the generic NAND layer was added
and made sure to update the erase info state.
It did not result in a build failure after merging the nand/for-4.17
branch in mtd/next because the generic NAND layer is not selected yet.
Let's fix that before a config option starts selecting MTD_NAND_CORE.
Fixes: e7bfb3fdbd ("mtd: Stop updating erase_info->state and calling mtd_erase_callback()")
Signed-off-by: Boris Brezillon <boris.brezillon@bootlin.com>
In core.c, some function descriptions do not match function
definitions. Just fix these mismatches.
Signed-off-by: Xiaolei Li <xiaolei.li@mediatek.com>
Signed-off-by: Boris Brezillon <boris.brezillon@bootlin.com>
Add an intermediate layer to abstract NAND device interface so that
some logic can be shared between SPI NANDs, parallel/raw NANDs,
OneNANDs, ...
Signed-off-by: Boris Brezillon <boris.brezillon@bootlin.com>
